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- W2000628339 abstract "We have deposited silicon dioxide by chemical vapor deposition at pressures of 2 to 12 torr and substrate temperatures as low as 75°C. Properties of the films on n-type InP substrates are reported. Hysteresis of less than 0.1 volts is observed in capacitance-voltage curves for the lowest-temperature depositions. For 100°C depositions surface state densities are in the low 10<sup>11</sup> cm-2eV-1 range. Changes in the dielectric properties are observed as deposition temperature drops from 300 to 75°C. Relative dielectric constant increases from 4 to 7 and resistivity decreases from 10<sup>15</sup> to 10<sup>12</sup> ohm-cm. Electrical properties can be further improved by both RTA and conventional furnace annealing." @default.
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- W2000628339 date "1989-11-28" @default.
- W2000628339 modified "2023-09-23" @default.
- W2000628339 title "MIS Structures On InP Using Oxide Deposited Near 100°C" @default.
- W2000628339 doi "https://doi.org/10.1117/12.962006" @default.
- W2000628339 hasPublicationYear "1989" @default.
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