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• W2000628944 abstract "We demonstrate that the contrast reversal effect in scanning capacitance microscopy (SCM) is related to the Si/SiO2 interface microroughness. The surface roughness has been associated with the concentration of states at the Si/SiO2 interface and a monotonic behavior of the SCM imaging is preferentially observed for a smooth surface and consequently a low state concentration. Changes in the oxide quality have also been found to strongly influence the measurements. A criterion based on the hysteresis measurements from forward and reverse dC/dV–V curves is discussed to better evaluate the oxide quality and to obtain reproducible SCM data." @default.
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• W2000628944 date "2002-09-02" @default.
• W2000628944 modified "2023-09-26" @default.
• W2000628944 title "Study of interface states and oxide quality to avoid contrast reversal in scanning capacitance microscopy" @default.
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• W2000628944 doi "https://doi.org/10.1063/1.1499228" @default.
• W2000628944 hasPublicationYear "2002" @default.
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