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- W2000628961 abstract "The effects of in situ cleaning, thermal and chemical treatments on wurtzite GaN surfaces have been studied using various electron spectroscopies and low energy electron diffraction (LEED). Nitrogen-ion bombardment or deposition of Ga metal, followed by annealing in UHV, yields clean (1×1)-ordered surfaces, with the latter giving a somewhat better LEED pattern. Uniform heating during annealing appears important in avoiding facetting. Annealing an `as-inserted' surface either in UHV or in a flux of NH3 vapor is not completely effective in cleaning, but annealing a clean ion-bombarded surface in NH3 impedes the formation of N vacancies which occurs in UHV. Surface band bending depends on anneal temperature for both as-inserted and ion-bombarded samples, changing by up to 0.7 eV from 300 to 700°C. This is tentatively explained by the accumulation of surface Ga vacancies which act as acceptors. Adsorbed H removes a surface state near the valence band maximum but is very sensitive to desorption by impact of ~90 eV electrons." @default.
- W2000628961 created "2016-06-24" @default.
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- W2000628961 date "1998-04-01" @default.
- W2000628961 modified "2023-10-14" @default.
- W2000628961 title "The dependence of the structure and electronic properties of wurtzite GaN surfaces on the method of preparation" @default.
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- W2000628961 doi "https://doi.org/10.1016/s0169-4332(97)00582-5" @default.
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