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• W2000636022 abstract "Aluminium nitride thin films were deposited by a reactive ion plating technique in a vacuum of 3*10-3 Torr. The composition of the film was analysed by IR spectrum. Thin film capacitors were formed as an Al-aluminium nitride-Al structure. The annealing characteristics of these structures have been studied at 420K. The frequency and temperature dependence of capacitance and tan delta have been studied in the audio frequency range 500 Hz-30 kHz and the results have been discussed. The dependence of AC conduction on frequency has been explained on the basis of the hopping conduction mechanism." @default.
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• W2000636022 date "1982-03-14" @default.
• W2000636022 modified "2023-10-16" @default.
• W2000636022 title "Dielectric and AC conduction properties of ion plated aluminium nitride thin films" @default.
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• W2000636022 doi "https://doi.org/10.1088/0022-3727/15/3/012" @default.
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