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• W2000636474 abstract "Infrared absorption has been investigated in high quality p-type SiGeSi multiple quantum wells grown by UHV-CVD. Both intersubband and free carrier absorptions have been quantitatively analyzed using a modified Drude model, and their relative contributions to the total absorbance have been determined as a function of polarization and doping level. The absorption coefficients have been deduced for radiation electric field along the growth axis and parallel to the plane of the layers." @default.
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• W2000636474 date "1996-01-01" @default.
• W2000636474 modified "2023-10-02" @default.
• W2000636474 title "Infrared absorption in p-type quantum wells: Intersubband transition and free carrier contributions" @default.
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• W2000636474 doi "https://doi.org/10.1016/0038-1101(95)00230-8" @default.
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