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- W2000636596 abstract "The effects of radiation on the characteristics of split-gate electrical erasable programmable read only memory (EEPROM)/flash cells with recently-proposed horn-shaped floating gates are studied in terms of cell read current, data retention, cycling endurance, program/erase efficiency, threshold voltage and junction leakage. Our results show that the cells appear to survive after 1 Mrad (Si) Co 60 irradiation. Moreover, the after-irradiation cell read current actually increases in the “erase” (i.e., low-threshold voltage, high-conducting) state (i.e., improves), albeit the cell read current also increases in the “program” (i.e., high-threshold voltage, low-conducting) state (i.e., a degradation). Our results also show that, despite an improvement in the initial read current in the “erase” state immediately after radiation, the write/erase cycling endurance of the flash cells is significantly impeded after irradiation, due to a much faster “window closure” rate in the “erase” state, although the cell read current is found to remain relatively stable in the “program” state after cycling." @default.
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- W2000636596 date "1997-09-01" @default.
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- W2000636596 title "A Study on the Radiation Hardness of Flash Cell with Horn-Shaped Floating-Gate" @default.
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- W2000636596 doi "https://doi.org/10.1143/jjap.36.5459" @default.
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