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- W2000646003 abstract "Abstract N-shaped negative differential resistance field effect transistors (NDRFETs) have been fabricated and demonstrated. The interesting N-shaped NDRs are three terminal controlled phenomena. This N-shaped NDR behavior is found in the higher drain-to-source voltage (VDS) regime and is obtained both at positive and negative gate-to-source bias (VGS). We believe that the NDR phenomena are attributed to the real space transfer (RST) effect. Due to the modulation doped effect and different barrier height, the NDR behavior can easily be controlled. The influence of VGS bias on the NDR characteristics is also investigated." @default.
- W2000646003 created "2016-06-24" @default.
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- W2000646003 date "1998-03-01" @default.
- W2000646003 modified "2023-09-27" @default.
- W2000646003 title "Comparison of modulation doped effect in negative differential resistance field effect transistors (NDRFETs)" @default.
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- W2000646003 doi "https://doi.org/10.1016/s0026-2714(97)00063-2" @default.
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