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- W2000646557 abstract "Abstract In the present study, In1–x Ga x As y P1–y /InP double heterostructure (DH) laser diodes with emission wavelength of 1.3 μm at room temperature were fabricated on (100) oriented InP subtrates. The properties of active layer were determined by EPMA, optical transmission and PL measurement. The electrical and optical properties were measured and discussed. Lasers fabricated from the heterostructure exhibited good electroluminescence. A broad area laser with active region thickness of 0.35 μm has a threshold current density as low as 1.52kA/cm2. The emission spectra just above threshold indicated a dominant peak near 1.29 μm. A typical value of the pulsed threshold current density of stripe lasers was 5 kA/cm2. The series resistance as low as 2O was obtained for these diodes. With proper heat sink, CW operation of these laser diodes can be obtained." @default.
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- W2000646557 date "1988-01-01" @default.
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- W2000646557 title "Fabrication of 1.3μm InGaAsP/InP double heterojunction lasers grown by liquid phase epitaxy" @default.
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- W2000646557 doi "https://doi.org/10.1080/02533839.1988.9677040" @default.
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