FRINK Linked Data Fragments server

Matches in SemOpenAlex for { <https://semopenalex.org/work/W2000646795> ?p ?o ?g. }

• W2000646795 abstract "A thin-film ZnO(n)/Si(p+) heterojunction diode is demonstrated. The thin film ZnO layer is deposited by Atomic Layer Deposition (ALD) at different temperatures on a p-type silicon substrate. Atomic force microscopy (AFM) AC-in-Air method in addition to conductive AFM (CAFM) were used for the characterization of ZnO layer and to measure the current-voltage characteristics. Forward and reverse bias n-p diode behavior with good rectification properties is achieved. The diode with ZnO grown at 80°C exhibited the highest on/off ratio with a turn-on voltage (VON) ∼3.5 V. The measured breakdown voltage (VBR) and electric field (EBR) for this diode are 5.4 V and 3.86 MV/cm, respectively." @default.
• W2000646795 created "2016-06-24" @default.
• W2000646795 creator A5003016123 @default.
• W2000646795 creator A5016237049 @default.
• W2000646795 creator A5016365779 @default.
• W2000646795 creator A5025980588 @default.
• W2000646795 creator A5047687469 @default.
• W2000646795 creator A5060091456 @default.
• W2000646795 creator A5080791787 @default.
• W2000646795 date "2013-10-01" @default.
• W2000646795 modified "2023-09-25" @default.
• W2000646795 title "Diode behavior in ultra-thin low temperature ALD grown zinc-oxide on silicon" @default.
• W2000646795 cites W1970272152 @default.
• W2000646795 cites W2001827620 @default.
• W2000646795 cites W2005392027 @default.
• W2000646795 cites W2007681943 @default.
• W2000646795 cites W2018540978 @default.
• W2000646795 cites W2019360522 @default.
• W2000646795 cites W2025192354 @default.
• W2000646795 cites W2026746318 @default.
• W2000646795 cites W2035866491 @default.
• W2000646795 cites W2046115642 @default.
• W2000646795 cites W2052414297 @default.
• W2000646795 cites W2055698609 @default.
• W2000646795 cites W2087746568 @default.
• W2000646795 cites W2088935122 @default.
• W2000646795 cites W2134960271 @default.
• W2000646795 doi "https://doi.org/10.1063/1.4826583" @default.
• W2000646795 hasPublicationYear "2013" @default.
• W2000646795 type Work @default.
• W2000646795 sameAs 2000646795 @default.
• W2000646795 citedByCount "38" @default.
• W2000646795 countsByYear W20006467952013 @default.
• W2000646795 countsByYear W20006467952014 @default.
• W2000646795 countsByYear W20006467952015 @default.
• W2000646795 countsByYear W20006467952016 @default.
• W2000646795 countsByYear W20006467952017 @default.
• W2000646795 countsByYear W20006467952018 @default.
• W2000646795 countsByYear W20006467952019 @default.
• W2000646795 countsByYear W20006467952020 @default.
• W2000646795 countsByYear W20006467952021 @default.
• W2000646795 countsByYear W20006467952022 @default.
• W2000646795 crossrefType "journal-article" @default.
• W2000646795 hasAuthorship W2000646795A5003016123 @default.
• W2000646795 hasAuthorship W2000646795A5016237049 @default.
• W2000646795 hasAuthorship W2000646795A5016365779 @default.
• W2000646795 hasAuthorship W2000646795A5025980588 @default.
• W2000646795 hasAuthorship W2000646795A5047687469 @default.
• W2000646795 hasAuthorship W2000646795A5060091456 @default.
• W2000646795 hasAuthorship W2000646795A5080791787 @default.
• W2000646795 hasBestOaLocation W20006467951 @default.
• W2000646795 hasConcept C102951782 @default.
• W2000646795 hasConcept C111368507 @default.
• W2000646795 hasConcept C113196181 @default.
• W2000646795 hasConcept C119599485 @default.
• W2000646795 hasConcept C127313418 @default.
• W2000646795 hasConcept C127413603 @default.
• W2000646795 hasConcept C165801399 @default.
• W2000646795 hasConcept C171250308 @default.
• W2000646795 hasConcept C185592680 @default.
• W2000646795 hasConcept C189278905 @default.
• W2000646795 hasConcept C19067145 @default.
• W2000646795 hasConcept C192562407 @default.
• W2000646795 hasConcept C205200001 @default.
• W2000646795 hasConcept C206008964 @default.
• W2000646795 hasConcept C20615193 @default.
• W2000646795 hasConcept C2777289219 @default.
• W2000646795 hasConcept C2779227376 @default.
• W2000646795 hasConcept C43617362 @default.
• W2000646795 hasConcept C49040817 @default.
• W2000646795 hasConcept C50942859 @default.
• W2000646795 hasConcept C544956773 @default.
• W2000646795 hasConcept C69544855 @default.
• W2000646795 hasConcept C78434282 @default.
• W2000646795 hasConcept C79794668 @default.
• W2000646795 hasConceptScore W2000646795C102951782 @default.
• W2000646795 hasConceptScore W2000646795C111368507 @default.
• W2000646795 hasConceptScore W2000646795C113196181 @default.
• W2000646795 hasConceptScore W2000646795C119599485 @default.
• W2000646795 hasConceptScore W2000646795C127313418 @default.
• W2000646795 hasConceptScore W2000646795C127413603 @default.
• W2000646795 hasConceptScore W2000646795C165801399 @default.
• W2000646795 hasConceptScore W2000646795C171250308 @default.
• W2000646795 hasConceptScore W2000646795C185592680 @default.
• W2000646795 hasConceptScore W2000646795C189278905 @default.
• W2000646795 hasConceptScore W2000646795C19067145 @default.
• W2000646795 hasConceptScore W2000646795C192562407 @default.
• W2000646795 hasConceptScore W2000646795C205200001 @default.
• W2000646795 hasConceptScore W2000646795C206008964 @default.
• W2000646795 hasConceptScore W2000646795C20615193 @default.
• W2000646795 hasConceptScore W2000646795C2777289219 @default.
• W2000646795 hasConceptScore W2000646795C2779227376 @default.
• W2000646795 hasConceptScore W2000646795C43617362 @default.
• W2000646795 hasConceptScore W2000646795C49040817 @default.
• W2000646795 hasConceptScore W2000646795C50942859 @default.
• W2000646795 hasConceptScore W2000646795C544956773 @default.
• W2000646795 hasConceptScore W2000646795C69544855 @default.
• W2000646795 hasConceptScore W2000646795C78434282 @default.
• W2000646795 hasConceptScore W2000646795C79794668 @default.
• W2000646795 hasIssue "10" @default.

• next