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- W2000649819 abstract "The impact of the silicon surface contaminants iron, copper and calcium on gate oxide integrity was investigated quantitatively by evaluating MOS test capacitors built on intentionally contaminated wafers. All three elements influenced dielectric breakdown field strength and charge to breakdown values if the surface contamination level was raised beyond 109 to 1010 atoms/cm2. The distribution of these elements in the silicon oxide could be related to electrical yield measurements." @default.
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- W2000649819 date "1997-07-01" @default.
- W2000649819 modified "2023-10-01" @default.
- W2000649819 title "The impact of iron, copper, and calcium contamination of silicon surfaces on the yield of a MOS DRAM test process" @default.
- W2000649819 doi "https://doi.org/10.1016/s0038-1101(97)00016-6" @default.
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