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• W2000652056 abstract "Time-resolved optical characterization is an indispensable tool to study the recombination mechanisms of excitons and/or carriers based on radiative, non-radiative, localization and many-body processes. In this paper, we review the instrumentation of various spectroscopic techniques for the assessment of In x Ga 1 -x N-based semiconductors such as time-resolved photoluminescence (TRPL), time-resolved electroluminescence (TREL), transient grating (TG) method to probe photothermal processes, microscopic TRPL using optical microscope, submicroscopic TRPL using scanning near field optical microscopy (SNOM) and pump-and-probe spectroscopy for the measurement of transient absorption/gain spectra. The obtained results are cited in the references." @default.
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• W2000652056 date "2001-01-01" @default.
• W2000652056 modified "2023-09-27" @default.
• W2000652056 title "Radiative and Nonradiative Recombination Processes in GaN-Based Semiconductors" @default.
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• W2000652056 doi "https://doi.org/10.1002/1521-396x(200101)183:1<41::aid-pssa41>3.0.co;2-v" @default.
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