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- W2000653273 abstract "Electronic structures of Tl-based copper-oxide superconductors were examined by performing tight-binding band calculations on the Tl2O4 double layers of Tl2Ba2Can−1CunO2n+4 and on the TlO3 single layers of TlBa2Can−1CunO2n+3. When the distortion of their Tl-O sheets is taken into consideration, the Tl2O4 double layers are found to have the bottom of the Tl 6s-block bands significantly below the Fermi level so that they have a large electron pocket to remove electrons from the x2-y2 bands of the CuO2 layers. In sharp contrast, however, the Tl 6s-block bands of the TlO3 single layers are found to lie well above the Fermi level, regardless of whether or not the distortions in their Tl-O sheets are taken into consideration. Unlike the Tl2O4 double layers, therefore, the TlO3 single layers do not remove electrons from the x2−y2 bands of the CuO2 layers. This is consistent with the observation that stoichiometric TlBa2Can−1CunO2n+3 already has a high formal oxidation state (2n+1)/n for (e.g., + 3.00, + 2.50, and + 2.33 for n=1,2, and 3, respectively), and hence further hole generation to produce superconductivity does not seem necessary." @default.
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- W2000653273 date "1989-09-01" @default.
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- W2000653273 title "Difference between single and double Tl-O layers for generating holes in Tl-based copper-oxide superconductors" @default.
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- W2000653273 doi "https://doi.org/10.1016/0921-4534(89)90079-8" @default.
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