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- W2000654016 abstract "In this study mechanical and electrical properties of the RF sputtered hydrogenated amorphous silicon germanium thin films deposited at room temperature have been discussed. Interesting correlation between the resistance and the flow of hydrogen is observed. Further, both band and hopping conduction mechanisms are found to exist simultaneously for the studied amorphous silicon germanium films." @default.
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- W2000654016 date "2005-07-01" @default.
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- W2000654016 title "Study on the RF Sputtered hydrogenated amorphous silicon–germanium thin films" @default.
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- W2000654016 doi "https://doi.org/10.1016/j.microrel.2005.02.008" @default.
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