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• W2000655508 abstract "We demonstrate a p-MOSFET fabricated on heterostructure. The Ge layer was epitaxially grown on substrate by high vacuum chemical vapor deposition. High-quality single crystalline Ge film confirmed by X-ray diffraction and transmission electron microscopy was achieved with a very low root-mean-square roughness of measured by atomic force microscopy. Secondary ion mass spectrometry results indicate that no Ga and As out-diffusion to Ge epi layer can be observed. By employing silane passivation, Ge p-MOSFET with gate stack was fabricated on heterostructure. The resultant transistor exhibited excellent subthreshold swing of and ratio greater than four orders. Additionally, times hole mobility enhancement over the universal curve of Si was achieved." @default.
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• W2000655508 date "2008-01-01" @default.
• W2000655508 modified "2023-10-17" @default.
• W2000655508 title "Fabrication of p-MOSFETs on Germanium Epitaxially Grown on Gallium Arsenide Substrate by Chemical Vapor Deposition" @default.
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• W2000655508 doi "https://doi.org/10.1149/1.2811859" @default.
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