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- W2000659421 abstract "The effect of dislocations introduced at plastic deformation (ND= 1 × 105 to 2 × 107 cm−2) on the activation energy δE of radiation defect thermal ionization in Si is studied. The temperature (80 to 400 K) dependences of the Hall coefficient at various steps of 60Co γ-ray irradiation are mea-sured. A variation in δE is found to take place for point defects accumulating near dislocations (A-centres, divacancies, interstitial carbon-substitutional carbon complex, carbon-oxygen-di-vacancy complex). An increase of δE with ND increasing is characteristic of A-centres, for example, for low integral γ-ray fluxes (Φ ⪅ 5 × 1016 cm−2). This is due to the increase of thermal ionization energy ΔE as a result of shifting of allowed band edges and defect levels, because of the crystal lat-tice deformation near dislocations. In dislocated Si (ND ⪆ 1 × 106 cm−2) on increasing O one ob-serves at first a decrease of δE, and then its increase. It is connected with the formation of radia-tion defect agglomerations near dislocations which have a localize dspatial charge and produce a potential barrier Ψ, whereby δE = ΔE =Ψ. The dose dependences of δE are explained taking into account the variation in Ψ with increasing O and the possibility of defect rearrangements in more complicated complexes near dislocations.[Russian Text Ignored.]" @default.
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- W2000659421 date "1986-07-16" @default.
- W2000659421 modified "2023-09-27" @default.
- W2000659421 title "The Effect of Dislocations on the Activation Energy of Radiation Defect Thermal Ionization" @default.
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- W2000659421 doi "https://doi.org/10.1002/pssa.2210960128" @default.
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