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Matches in SemOpenAlex for { <https://semopenalex.org/work/W2000660002> ?p ?o ?g. }

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• W2000660002 abstract "RF-ICP sputtered film was used as the gate insulator in pentacene-based organic thin-film transistors (TFTs). With the dielectric breakdown field larger than and the relative electrical permittivity as 7 in the film, the proposed TFTs exhibit low operation voltage, low subthreshold swing and high on/off current ratio . By adjusting the sputtering process, it was found that smooth morphology of film (surface roughness ) can be obtained by lowering down the process temperature. This atomically smooth dielectric surface leads to the growth of large pentacene grains and improves the leakage current and also the field effect mobility." @default.
• W2000660002 created "2016-06-24" @default.
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• W2000660002 date "2007-01-01" @default.
• W2000660002 modified "2023-09-26" @default.
• W2000660002 title "Organic Thin-Film Transistors with Low-Temperature AlN Film as Gate Insulator" @default.
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• W2000660002 doi "https://doi.org/10.1149/1.2372227" @default.
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