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- W2000668809 abstract "Surface and interface structures of PtSi samples were analysed by means of XPS depth profiling by using sequential Ar ion sputtering. Pt layers of 50 nm thickness were evaporated onto n-type Si wafers, then treated at temperatures in the region of 450–600°C in H2 or O2 atmospheres for 30–45 min. In the case of samples treated in O2, silicon can be identified in oxidized form at the Ptsilicide interfaces contrary to the samples treated in H2, where this interface is vanishing. In all cases SiO2 is found to be present in the uppermost layer of the samples." @default.
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- W2000668809 date "1987-01-01" @default.
- W2000668809 modified "2023-09-27" @default.
- W2000668809 title "XPS investigation of Pt-Si interfaces formed during heat treatments in different (H2, O2) atmospheres" @default.
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- W2000668809 doi "https://doi.org/10.1016/0042-207x(87)90099-6" @default.
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