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- W2000677715 abstract "An InSb photovoltaic sensor shows high performance in quantum yield and diode electronics for medium wave IR and thermal imaging in the 3 to 5 μm range. A 64 x 64 element InSb focal plane array has been developed which has succeded in reproducing TV images in a 3 to 5 μm wavelength range with fine detail using the standard 1/30 second frame time, by employing a newly designed face to face electrical interconnection technique which uses thin islands of copper and indium layers on a Si-CCD substrate instead of ordinary tall indium bumps. The InSb diode array fabrication is based on the planer technique which has an advantage of high integration of diodes over the mesa construction. Their excellent diode back-bias characteristic and its uniformity within the array have been attained by Mg ion implantation and double passivation layers of InSb anodic oxide film and Al203 sputtered layer. These diodes, with less than 50 μm wafer thickness, show uniform quantum efficiency of more than 50 percent in the 2.5 to 5 μm wavelength region with backsurface illumination. This diode array, with a sapphire window back-up plate is bonded to the Si-CCD substrate to form the two-layer laminated construction. The electrical interconnection between the diodes and the CCD has shown almost no loss, even after more than one hundred thermal cycles to 77K. With proper control of created IR charge injection into the CCD well and with the use of a 3.5 to 4.0 μm band-pass filter, a noise equivalent temperature difference (NEAT) below 0.07K has been obtained." @default.
- W2000677715 created "2016-06-24" @default.
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- W2000677715 date "1986-11-25" @default.
- W2000677715 modified "2023-10-05" @default.
- W2000677715 title "64 x 64 InSb Focal Plane Array With Improved Two Layer Structure" @default.
- W2000677715 doi "https://doi.org/10.1117/12.938647" @default.
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