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- W2000680957 abstract "We studied the photoreflectance (PR) and photoluminescence (PL) spectroscopies of self-assembled InAs quantum dots grown on n<sup>+</sup>-GaAs (100) by molecular beam epitaxy. The PL spectroscopy of self-assembled Ge quantum dots (Ge-QDs) grown on n<sup>+</sup>-Si (100) by metal organic chemical vapor deposition epitaxy was also investigated. PL spectra show the optical transitions from the ground state and excited states in the InAs quantum dots (InAs-QDs) and a transition from the ground state in the Ge-QDs at the temperature 20 K. PR spectra show the energy features of the transitions of the ground state and four excited states in the InAs-QDs, InAs wetting layer, and GaAs band-gap. The fitted results of the transition energies and the broadening parameters are reported. The results demonstrate that low growth rate of the InAs-QDs, the submonolayer deposited of the alternating beam, and covered with the overgrowth InGaAs methods, have improved the nano-structure quality of the InAs-QD, grown at 485ºC and V/III ratio of 2. The high quality Ge-QDs were made, and characterized by PL experiments." @default.
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- W2000680957 date "2003-07-02" @default.
- W2000680957 modified "2023-10-06" @default.
- W2000680957 title "Optical studies of InAs/GaAs and Ge/Si quantum dot structures" @default.
- W2000680957 doi "https://doi.org/10.1117/12.482478" @default.
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