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- W2000681000 abstract "Thermal drive-in diffusion of ion-implanted F atoms has been employed to fluorinate SiO 2 /Si interfaces and thereby improve their electrical properties. The interface state density can be lowered with little fixed charge generation. Correspondingly, pn-junction surface leakage current decreases. Furthermore, the interfaces can be hardened against hot-electrons due to Fowler-Nordheim current injection and avalanche current at the junction surface. As a result, a fluorinated MOSFET shows higher hot-carrier immunity. It is pointed out that there is an optimal F dose for these improvements to be achieved." @default.
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- W2000681000 date "1989-06-01" @default.
- W2000681000 modified "2023-09-24" @default.
- W2000681000 title "Improvement of SiO<sub>2</sub>/Si Interface Properties Utilising Fluorine Ion Implantation and Drive-in Diffusion" @default.
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- W2000681000 doi "https://doi.org/10.1143/jjap.28.1041" @default.
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