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Matches in SemOpenAlex for { <https://semopenalex.org/work/W2000682647> ?p ?o ?g. }

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• W2000682647 abstract "This work studies the possibility to treat plasma enhanced chemical vapor deposited (PECVD) silicon germanium (Si1−xGex) thin films grown at 400 °C or lower with a pulsed excimer laser for obtaining good MEMS structural layers. The main advantage of using PECVD is that a high growth rate (∼35 nm/min) can be achieved at low temperatures (≤370 °C). It is demonstrated that optimizing the pulse fluence, number and rate yields high quality films characterized by a low defect density (∼102 defect/cm2), large grains (∼300 nm), a low mean stress and a low stress gradient. Furthermore, the electrical resistivity of the as grown material, deposited at 210 °C, is reduced from 12 kΩ cm to 1.3 mΩ cm after laser annealing." @default.
• W2000682647 created "2016-06-24" @default.
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• W2000682647 date "2006-03-01" @default.
• W2000682647 modified "2023-10-18" @default.
• W2000682647 title "Characterization of KrF excimer laser annealed PECVD SixGe1−x for MEMS post-processing" @default.
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• W2000682647 doi "https://doi.org/10.1016/j.sna.2006.01.035" @default.
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