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• W2000687341 abstract "Hall-effect measurements of F-doped polycrystalline SnO 2 thin films have been performed in the temperature range from 4.2 to 300 K with samples having different sizes of grains involved in the material. The carrier concentration and mobility have been analyzed in terms of the transport mechanism in a degenerate semiconductor. From a comparison between the calculated and experimental carrier concentration, we have obtained the results that the effective mass of electrons is 0.935 m 0 and that the position of the Fermi level in the conduction band varies from 0.269 to 0.224 eV for a change in the carrier concentration from 5.70 to 4.31 (× 10 20 cm -3 ). Based on an analysis of the Hall mobility, it has been found that scattering by neutral and ionized impurities dominates the mobility and that both the impurities are localized at grain boundaries involved in polycrystalline SnO 2 films." @default.
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• W2000687341 date "1988-04-01" @default.
• W2000687341 modified "2023-09-24" @default.
• W2000687341 title "Hall-Effect Measurement on Polycrystalline SnO₂ Thin Films" @default.
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• W2000687341 doi "https://doi.org/10.1143/jjap.27.552" @default.
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