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• W2000688126 abstract "Results of carrier lifetime studies in low-doped epitaxial 4H SiC layers are reported. The free carrier absorption (FCA) technique was applied to extract carrier lifetime parameters and their spatial distribution in a wide photoexcitation range. The FCA magnitude is shown to scale linearly with the photoinjected carrier concentration, while the absorption cross section increases according to a λ4.4 law for near infrared wavelengths. High spatial resolution carrier lifetime mapping of large 4H SiC areas revealed features related to structural imperfections of epilayers. Finally, a density dependent fast lifetime component was observed at high injection levels and attributed to band-to-band Auger recombination." @default.
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• W2000688126 date "1997-04-15" @default.
• W2000688126 modified "2023-10-09" @default.
• W2000688126 title "Free carrier absorption and lifetime mapping in 4H SiC epilayers" @default.
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• W2000688126 doi "https://doi.org/10.1063/1.365050" @default.
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