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• W2000692113 abstract "The structural property of InN films grown on Ga-face GaN layers by metal-organic chemical vapor deposition has been studied by high-resolution x-ray diffraction. The mosaic tilt and twist are found to be strongly dependent on the surface lateral grain size. The twist decreases with increasing grain size and finally approaches to a constant level. On the other hand, the mosaic tilt increases substantially when the grain size becomes large enough and exceeds the width of step terraces on the GaN surface, showing an important mechanism for the defect generation in the InN∕GaN system with large out-of-plane lattice mismatch." @default.
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• W2000692113 date "2006-08-28" @default.
• W2000692113 modified "2023-09-29" @default.
• W2000692113 title "Effects of grain size on the mosaic tilt and twist in InN films grown on GaN by metal-organic chemical vapor deposition" @default.
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• W2000692113 doi "https://doi.org/10.1063/1.2345224" @default.
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