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• W2000695649 abstract "Undoped ZnTe films with very low resisitivity were grown by vapor phase epitaxy (VPE) with elemental Zn and Te as source materials. The source vapors were transported separately to the vicinity of the substrates, kept at 450–560degrC, by flow through a thin quartz tube. The growth rate showed two activation energies (45 kcal/mol and 15 kcal/mol) according to the growth temperature. The epitaxial growth was confirmed by using high energy electorn diffraction (RHEED) measurements. Hall effect measurements showed p-type conductivity. Conductive films were obtained when the flow rates of Zn and Te were almost equal and the substrate temperature was above 500°C." @default.
• W2000695649 created "2016-06-24" @default.
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• W2000695649 date "1996-03-01" @default.
• W2000695649 modified "2023-09-26" @default.
• W2000695649 title "Vapor Phase Epitaxial Growth of ZnTe Films Using Metallic Sources" @default.
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• W2000695649 doi "https://doi.org/10.1143/jjap.35.l374" @default.
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