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• W2000703330 abstract "The last process of the (1 0 0) γ-LiAlO2 (LAO) wafer polishing has been investigated by adopting two different sizes (20 nm and 40 nm) SiO2 suspension. Atomic force microscopy images show that the suspension with 20 nm SiO2 particles tends to introduce a set of parallel trenches to the wafer surface and the suspension with 40 nm SiO2 particles can provide a relative smooth surface. The following epitaxial ZnO films grown on the two as-prepared wafers demonstrate that the trench structure of the wafer surface will lead to mixed orientations of the ZnO film and single phase m-plane ZnO film can be obtained on the (1 0 0) LAO with a smooth surface." @default.
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• W2000703330 date "2009-06-01" @default.
• W2000703330 modified "2023-10-05" @default.
• W2000703330 title "Polishing of (100) γ-LiAlO2 wafer and its effect on the epitaxial growth of ZnO films by MOCVD" @default.
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• W2000703330 doi "https://doi.org/10.1016/j.jallcom.2008.12.086" @default.
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