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• W2000710687 abstract "High quality AlN layer could be grown at 800 °C by metal organic vapor phase epitaxy (MOVPE) by pulse injection (PI) method in which trimethylaluminium (TMAl) and NH3 are alternately supplied. Crystal quality of AlN layer grown by PI method (PI-AlN) was comparable with AlN layer grown by conventional MOVPE with continuous sources flow sequence (continuous-AlN, C-AlN) at 1240 °C showing similar (0002) symmetric and (1012) skew symmetric full width at half maximum (FWHM) values by high resolution X-ray diffraction (HRXRD). Especially, it is noticeable that best crystal quality was observed when the growth rate was controlled to 1 monolayer/cycle. Moreover, PI method was proved to be effective in improving surface roughness of AlN layer. The root-mean-square (RMS) roughness of PI-AlN layer was 0.9 nm, which is three times smaller than C-AlN layer grown at same temperature with PI-AlN layer." @default.
• W2000710687 created "2016-06-24" @default.
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• W2000710687 date "2007-09-28" @default.
• W2000710687 modified "2023-10-14" @default.
• W2000710687 title "Low Temperature Metal Organic Vapor Phase Epitaxial Growth of AlN by Pulse Injection Method at 800 °C" @default.
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• W2000710687 doi "https://doi.org/10.1143/jjap.46.l927" @default.
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