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• W2000715086 abstract "Pure nickel and very dilute Ni–S systems (containing 50–340 at.ppm sulphur), irradiated by 5 MeV electrons at 270 K, were studied by positron annihilation spectroscopy (PAS) and the electrical resistivity measurements. The ultrafine S-rich precipitates (clusters), which are formed by thermal ageing at about 650 K in Ni–S, are observed clearly by PAS. The PAS data were interpreted by assuming that the positrons localize in the volume of the “defect-free” S-rich clusters due to affinity-induced confinement. Under irradiation, the accumulation of the vacancies in the Ni–S system is several times greater than that in pure Ni. This fact testifies the strong interaction between S atoms and self-interstitial atoms. During post-irradiation annealing, the formation and recovery process of the S-rich clusters are revealed: (i) the mobile vacancy–sulphur complexes, which are formed above 350 K, aggregate into nanovoids; (ii) above 550 K, the dissociation of vacancies from the nanovoids decorated with S-atoms leads to the formation of the S-rich clusters; and (iii) the S-rich clusters anneal out at about 870 K." @default.
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• W2000715086 date "2014-06-01" @default.
• W2000715086 modified "2023-10-18" @default.
• W2000715086 title "Thermally- and irradiation-induced sulphur aggregation in Ni–S ageing system studied by positron annihilation" @default.
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• W2000715086 doi "https://doi.org/10.1016/j.jnucmat.2014.03.003" @default.
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