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- W2000729112 abstract "InSb (110) surfaces, which were cleaned by the argon ion bombardment annealing technique, have been investigated by AES, LEED, RHEED and surface conductivity measurements to study the influence of ion-bombardment on the chemical, structural and electronic properties. The AES data show only the presence of In and Sb on the (110) surface both before and at various stages of ion-bombardment. LEED and RHEED measurements on the cleaned surfaces exhibit spots/streaks characteristic for an InSb 1 × 1 surface unit cell. The LEED pattern is obliterated depending on the ion dose and the ion energy. The impinging ions roughen the surface as indicated by the growth of a RHEED spot pattern. The defect structure influences the carrier mobilities and concentrations in the space charge layer." @default.
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- W2000729112 date "1979-11-01" @default.
- W2000729112 modified "2023-09-27" @default.
- W2000729112 title "Electronic structure of ion bombarded InSb (110) surfaces" @default.
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- W2000729112 doi "https://doi.org/10.1016/0378-5963(79)90001-1" @default.
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