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- W2000735406 abstract "The focus of this work is to validate the drain current analytical model of the Fully Depleted Diamond SOI nMOSFETs, by applying the paired t-test statistical evaluation with experimental data of the six different samples of integrated circuits containing different Diamond SOI MOSFETs and Conventional ones counterparts. Two parameters are considered in this work: maximum transconductance and saturation drain current. We observe that, for the most cases (worst case is around 85% of the repeatability for the saturation drain current), the Diamond drain current analytical model is capable to reproduce a similar statistical behavior than the one observed for the conventional SOI nMOSFET counterpart, considering the same bias conditions and SOI CMOS manufacturing process of the integrated circuits." @default.
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- W2000735406 date "2012-08-30" @default.
- W2000735406 modified "2023-10-17" @default.
- W2000735406 title "Experimental Validation of the Drain Current Analytical Model of the Fully Depleted Diamond SOI nMOSFETs by Using Paired T-test Statistical Evaluation" @default.
- W2000735406 doi "https://doi.org/10.1149/04901.0169ecst" @default.
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