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- W2000735604 abstract "Selective metalorganic deposition of GaAs using reactively sputtered aluminum nitride has been developed. The high resistivity polycrystalline GaAs on aluminum nitride film has the same growth rate as the monocrystalline one and is of good surface morphology. The single crystal layer has no faceted growth near the edge of aluminum nitride film and good electrical and optical properties which are comparable with the normal GaAs epitaxial layer. These results show that this process may be used for the precise planar technology of GaAs." @default.
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- W2000735604 title "Selective metalorganic chemical vapour deposition for GaAs planar technology" @default.
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- W2000735604 doi "https://doi.org/10.1016/0022-0248(84)90417-2" @default.
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