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• W2000754195 abstract "By use of in situ reflection high-energy electron diffraction (RHEED), the heteroepitaxial growth of strained-layer EuTe on PbTe(111) was investigated. From the determination of the in-plane EuTe surface lattice constant as a function of the layer thickness, the onset of EuTe strain relaxation (at critical layer thickness h c ) was obtained. Time-dependent intensity measurements of different features in the RHEED patterns indicate that the critical layer thickness essentially coincides with an abrupt roughening of the EuTe surface. In spite of the observation that for certain growth conditions a change in the damping of the RHEED intensity oscillations occurs at h c , generally, the damping behavior does not lead to the correct critical layer thickness" @default.
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• W2000754195 date "1993-10-15" @default.
• W2000754195 modified "2023-10-18" @default.
• W2000754195 title "Strain relaxation by coherent three-dimensional islanding in molecular-beam epitaxy of EuTe on PbTe(111)" @default.
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• W2000754195 doi "https://doi.org/10.1103/physrevb.48.10998" @default.
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