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• W2000754961 abstract "We report on a scanning tunneling microscopy study of TiO2(110) surfaces. Different types of intrinsic defects are produced by a high-temperature treatment at T ≥ 1070 K in UHV, i.e. (001) single-steps, (001) line defects, and oxygen vacancies occur as predominant types of defects. Atomically resolved STM images make it possible to determine their geometric structures. With additional input from voltage-dependent (STS) images, simple structural models are derived for electrostatically neutral (001) single-steps at TiO2(110) surfaces and for (001) line defects. The latter may formally be described by titanium vacancies and oxygen vacancies along the [001] direction." @default.
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• W2000754961 date "1995-08-01" @default.
• W2000754961 modified "2023-09-23" @default.
• W2000754961 title "The geometric structure of intrinsic defects at TiO2(110) surfaces: an STM study" @default.
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• W2000754961 doi "https://doi.org/10.1016/0039-6028(95)00572-2" @default.
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