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- W2000759768 abstract "We report the fabrication of extremely high-density GaAs quantum dots (QDs) by droplet epitaxy. We investigated the dependence of temperature and coverage on the dot density. As a result, an areal density of 7.3 × 1011 cm−2 was achieved at a growth temperature of 30 °C by controlling the amount of Ga. The QDs showed clear luminescence even when grown at a low temperature of 30 °C." @default.
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- W2000759768 date "2012-05-21" @default.
- W2000759768 modified "2023-10-10" @default.
- W2000759768 title "Extremely high-density GaAs quantum dots grown by droplet epitaxy" @default.
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- W2000759768 doi "https://doi.org/10.1063/1.4721663" @default.
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