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• W2000762114 abstract "The InGaN/GaN blue light emitting diodes (LED) structures have been grown on sapphire substrates with a hexagonal array of hemispherical patterns by low-pressure metalorganic chemical vapor deposition. Vertical LED structures on Cu carriers are fabricated using electroplating and KrF laser lift-off techniques. After removal of the patterned sapphire substrate, an inductively coupled plasma etching is carried out to expose the n-GaN layer for n-metal contact. It is observed that GaN columns are formed at the center of the concave hemispheres after dry etching processes. Cathodoluminescence and wet chemical etching investigations reveal that a high density of dislocations is found to be generated at these specific positions. The possible mechanism for these observations is attributed to the defect distribution and defect-dependent selective etching of the GaN." @default.
• W2000762114 created "2016-06-24" @default.
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• W2000762114 date "2014-01-22" @default.
• W2000762114 modified "2023-10-05" @default.
• W2000762114 title "N-GaN column arrays on the vertical InGaN/GaN blue LEDs formed by maskless dry etching" @default.
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• W2000762114 doi "https://doi.org/10.1002/crat.201300316" @default.
• W2000762114 hasPublicationYear "2014" @default.
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