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• W2000770348 abstract "The authors report the structural, optical, and transport properties of high quality InN epitaxial films grown on GaN substrates by plasma-assisted molecular beam epitaxy. They have found a strong correlation between the structural quality and the measured carrier mobilities. Comparison of temperature-dependent Hall data with a theoretical transport model indicates that the electron mobility in state-of-art InN is limited by charged dislocation scattering. The model predicts that an order-of-magnitude increase in electron mobilities can be achieved by the reduction of dislocation densities in InN." @default.
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• W2000770348 date "2006-10-16" @default.
• W2000770348 modified "2023-10-09" @default.
• W2000770348 title "Effect of dislocation scattering on the transport properties of InN grown on GaN substrates by molecular beam epitaxy" @default.
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• W2000770348 doi "https://doi.org/10.1063/1.2364456" @default.
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