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• W2000771274 abstract "GaN epitaxial layers were grown with the migration-enhanced epitaxy (MEE) by molecular beam epitaxy using rf-plasma nitrogen. GaN films were directly grown on (0001) sapphire substrates without any buffer layers, varying the substrate nitridation time from 0 to 90 min. The inversion domain density was reduced by increasing the substrate nitridation time. Meanwhile, the room temperature (RT) mobility peaked at 45 min nitridation, with the value of 362 cm2/Vs at the carrier density of 1.7 × 1017 cm—3. The photoluminescence intensity also peaked at 20 min nitridation. The threading dislocation density of MEE-GaN was estimated to be 1.0 × 1010 cm—2 by the cross-sectional images of transmission electron microscope observation. The dislocation density of MEE-GaN was reduced remarkably by the insertion of the high-temperature grown AlN multiple intermediate layer (HT-AlN-MIL) and it was clearly observed that most dislocations were bent during passing through the HT-AlN-MIL. The dislocation density of MEE-GaN grown on HT-AlN-MIL was evaluated to be about 2.1 × 109 cm—2 by a selective photoelectrochemical (PEC) wet etching, as a result, the highest RT mobility of 668 cm2/Vs was achieved." @default.
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• W2000771274 date "2000-07-01" @default.
• W2000771274 modified "2023-10-18" @default.
• W2000771274 title "Suppression of Inversion Domains and Decrease of Threading Dislocations in Migration Enhanced Epitaxial GaN by RF-Molecular Beam Epitaxy" @default.
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• W2000771274 doi "https://doi.org/10.1002/1521-396x(200007)180:1<65::aid-pssa65>3.0.co;2-1" @default.
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