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- W2000775546 abstract "Sheet resistivity measurements on 100 mm 〈100〉 silicon, implanted at 100 keV, for B+, As+ and P+ as a function of screen oxide thickness and twist orientation are presented. We identify the optimum orientation and screen oxide thickness for these implants to avoid variations in the measurement from channeling and dopant capture by the oxide. For a given species and energy there is an optimum oxide thickness range to monitor implanter uniformity performance; thinner oxides will degrade uniformity due to increased channeling effects while thicker oxides will degrade uniformity due to variable dose capture in the nonuniform oxide film. For moderate to high energy implants there is a useful optimum screen oxide thickness which, in conjunction with wafer orientation, will adequately minimize these channeling and oxide-induced sheet resistivity non-uniformities." @default.
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- W2000775546 date "1989-02-01" @default.
- W2000775546 modified "2023-09-30" @default.
- W2000775546 title "Sheet resistance uniformity monitoring of a medium-current ion implanter" @default.
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- W2000775546 doi "https://doi.org/10.1016/0168-583x(89)90204-8" @default.
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