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- W2000783812 abstract "Abstract A new furnace design has permitted a study of the reactions involved in the vapour phase growth of InP by the reaction of PCl 3 with indium in a hydrogen environment at elevated temperatures. By adding small quantities of gallium to the indium source, layers of Ga x In 1− x P have been grown onto InAs, InP, GaAs and GaP seeds. In general the gallium concentration of the layers decreases from the interface to the layer surface by an extent which is related to the source saturation process." @default.
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- W2000783812 date "1971-12-01" @default.
- W2000783812 modified "2023-09-27" @default.
- W2000783812 title "The vapour phase growth of GaxIn1−xP epitaxial layers" @default.
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- W2000783812 doi "https://doi.org/10.1016/0022-0248(71)90091-1" @default.
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