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- W2000787913 abstract "We have investigated the reactive sputtering of V-Si and Nb-Ge films in a dc diode and in a magnetron sputtering system toward the possible use of such films in high ( <tex xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>simg 10K</tex> ) operating temperature Josephson devices. Large differences in the dependence of T <inf xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>c</inf> on deposition temperature and on average film composition were found. Above 700°C maximum T <inf xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>c</inf> 's of 16.8K in V <inf xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>3</inf> Si and 21K in Nb <inf xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>3</inf> Ge were obtained in the dc diode sputtered films. Below this temperature T <inf xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>c</inf> 's degraded, however at 500 °C values of close to 12K were still found in both sets of films. Transmission electron microscopy studies indicate that a growth mechanism operates during both sputtering processes which can produce adjacent grains which have greatly different compositions. As a result, high T <inf xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>c</inf> 's in both Nb-Ge and V-Si can be obtained in films which have average compositions very far removed from ideal 3/1 stoichiometry." @default.
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- W2000787913 date "1985-03-01" @default.
- W2000787913 modified "2023-10-18" @default.
- W2000787913 title "Reactively sputtered V<inf>3</inf>Si and Nb<inf>3</inf>Ge films" @default.
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- W2000787913 doi "https://doi.org/10.1109/tmag.1985.1063722" @default.
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