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• W2000801785 abstract "Single crystals of sapphire (α-Al2O3) were irradiated at GANIL with 0.7 MeV/amu xenon ions corresponding to an electronic stopping power of 21 keV/nm. Several fluences were applied between 5 X 1011 and 2 X 1014 ions/cm2. Irradiated samples were characterized using optical absorption spectroscopy. This technique exhibited the characteristic bands associated with F and F+ centers defects. The F centers density was found to increase with the fluence following two different kinetics: a rapid increase for fluences less than 1013 ions/cm2 and then, a slow increase for higher fluences. For fluences less than 1013 ions/cm2, results are in good agreement with those obtained by Canut et al. [B. Canut, A. Benyagoub, G. Marest, A. Meftah, N. Moncoffre, S.M.M. Ramos, F. Studer, P. Thevenard, M. Toulemonde, Phys. Rev. B 51 (1995) 12194]. In the fluences range: 1013–1014 ions/cm2, the F centers defects creation process is found to be different from the one evidenced for fluences less than 1013 ions/cm2." @default.
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• W2000801785 date "2009-03-01" @default.
• W2000801785 modified "2023-10-15" @default.
• W2000801785 title "Defects creation in sapphire by swift heavy ions: A fluence depending process" @default.
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• W2000801785 doi "https://doi.org/10.1016/j.nimb.2009.02.021" @default.
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