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- W2000802233 abstract "We describe a plasma-based dry etching procedure which permits selective etching of Si over Ge with a Si/Ge etch rate ratio of over 70 and negligible etching of the Ge underlayer. This is achieved in a SF6/H2/CF4 gas mixture by the formation of a thin (≂3 nm) involatile etch stop layer on the Ge surface which consists of Ge-sulfide and carbonaceous material." @default.
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- W2000802233 date "1990-04-09" @default.
- W2000802233 modified "2023-09-26" @default.
- W2000802233 title "Selective dry etching of silicon with respect to germanium" @default.
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- W2000802233 doi "https://doi.org/10.1063/1.102490" @default.
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