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- W2000808602 abstract "An improved normally-off GaAs MESFET was fabricated by employing Sn-doped SiO2 glass, which was used as an Sn-diffusant for making the N+ layer. An N+ layer with Rs=100$/□ and Ns=3×1013 cm−2 was successfully obtained under 800°C, 20 min diffusion conditions. A new self-alignment technique, using doped-SiO2 film, provided a high performance normally-off GaAs FET." @default.
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- W2000808602 date "1981-01-01" @default.
- W2000808602 modified "2023-10-18" @default.
- W2000808602 title "Self-aligned normally off GaAs MESFET using Sn-doped SiO2 glass" @default.
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- W2000808602 doi "https://doi.org/10.1049/el:19810581" @default.
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