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- W2000814951 abstract "In this work, nickel induced lateral crystallization (NILC) of amorphous silicon at various temperatures has been investigated in detail. The crystallized film was characterized by micro Raman spectroscopy, atomic force microscopy (AFM), and transmission electron microscopy (TEM). Large leaf-like grains with a length on the order of 10–20 μm and a width on the order of 1–5 μm have been observed by NILC and subsequent heat treatment at 1000 °C. AFM measurements show that the crystallized film was combined by ‘smooth’ and ‘rough’ regions. Further TEM research reveals that the ‘smooth’ region has larger size and fewer defects, which may be a single grain with preferential 〈110〉 orientation. For the ‘rough’ region, many defects, dislocations and mismatches are found in it. It seems to be mixed by randomly oriented smaller grains. Further high temperature annealing can reduce the defects at the grain boundary and enlarge the grains. It was found that the NILC rate depends strongly on the annealing temperature. A maximum rate occurs at approximately 625 °C, the influences of other factors such as Ni pattern, amount of Ni, annealing time, etc., on the NILC rate are also investigated." @default.
- W2000814951 created "2016-06-24" @default.
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- W2000814951 date "2002-03-01" @default.
- W2000814951 modified "2023-10-14" @default.
- W2000814951 title "Study of grain growth of polysilicon formed by nickel-induced-lateral-crystallization of amorphous silicon and subsequent high temperature annealing" @default.
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- W2000814951 doi "https://doi.org/10.1016/s0040-6090(01)01722-9" @default.
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