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- W2000837534 abstract "We report the influence of the field effect on the dc resistance and Hall coefficient in the strain-induced Mott insulating state of an organic superconductor $ensuremath{kappa}mathrm{text{ensuremath{-}}}(mathrm{BEDT}mathrm{text{ensuremath{-}}}mathrm{TTF}{)}_{2}mathrm{Cu}[mathrm{N}(mathrm{CN}{)}_{2}]mathrm{Br}$. Conductivity obeys the formula for an activated transport ${ensuremath{sigma}}_{ensuremath{square}}={ensuremath{sigma}}_{0}mathrm{exp}(ensuremath{-}W/{k}_{B}T)$, where ${ensuremath{sigma}}_{0}$ is a constant and $W$ depends on the gate voltage. The gate-voltage dependence of the Hall coefficient shows that, unlike in conventional field-effect transistors, the effective mobility of dense hole carriers ($ensuremath{sim}1.6ifmmodetimeselsetexttimesfi{}{10}^{14}text{ }text{ }{mathrm{cm}}^{ensuremath{-}2}$) is enhanced by a positive gate voltage. This implies that carrier doping involves delocalization of intrinsic carriers that were initially localized due to electron correlation." @default.
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- W2000837534 date "2009-09-08" @default.
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- W2000837534 title "Field-Induced Carrier Delocalization in the Strain-Induced Mott Insulating State of an Organic Superconductor" @default.
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- W2000837534 doi "https://doi.org/10.1103/physrevlett.103.116801" @default.
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