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- W2000838494 abstract "The interface formation upon deposition of Gd overlayers onto n-type GaAs(110) substrates was investigated at room and low (20 K, 100 K) temperatures by photoemission, UPS, AES, and LEED. Binding energy shifts of Ga 3d and As 3d levels at 300 K and 100 K were observed starting from the minimal Gd coverage (∼0.03 ML). It was found that band bending saturates only after metallization of the interface at 1–2 ML. It is argued that two different mechanisms are involved in the Schottky-barrier formation: Fermi level pinning by defect states and metal-induced gap states. The growth of Gd overlayer at low and room temperatures leads to reacted components showing up in Ga 3d and As 3d photoemission spectra at coverages ≥0.03 ML. LEED studies at T=20 300 K showed disordered interface structures at submonolayer and high coverage ranges. Temperature-induced changes in the interface formation were observed as well. At 300 K the overlayer is cluster-like even at 0.03 ML, while at 100 K and 20 K it is close to Stranski–Krastanov and layer-by-layer types, respectively." @default.
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- W2000838494 date "1999-08-01" @default.
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- W2000838494 title "Interface and Schottky barrier formation in the Gd/GaAs(110) system" @default.
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- W2000838494 doi "https://doi.org/10.1016/s0039-6028(99)00123-5" @default.
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