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- W2000838570 abstract "The microwave noise characteristics of InAlN/GaN heterojunction HEMTs are analysed by using an equivalent circuit model in this paper. It shows that the minimum noise figure of InAlN/GaN HEMTs can be comparable with that of AlGaN/GaN HEMTs at X-band and higher frequency band. However, at the lower microwave frequency band, the minimum noise figure of InAlN/GaN HEMTs is a little worse, the reason of which is because of its high gate-leakage current. At last, three proposals are provided to improve the noise characteristics of InAlN/GaN HEMTs." @default.
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- W2000838570 date "2010-05-01" @default.
- W2000838570 modified "2023-09-25" @default.
- W2000838570 title "The microwave noise characteristics of InAlN/GaN HEMTs" @default.
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- W2000838570 doi "https://doi.org/10.1109/icmmt.2010.5524738" @default.
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