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- W2000851034 abstract "We report on ZnO-based thin-film transistors (TFTs) fabricated using SiO2/p-Si substrates on which their ZnO channel layers have been deposited by rf sputtering at various temperatures: room temperature (RT), 100, and 200 °C. When they went through rapid thermal annealing in forming gas ambient (H2:N2=1:10) for n-type doping, the highest field effect mobility of ∼1.93 cm2/V s was achieved from ZnO-TFTs prepared using the deposition temperature of 200 °C while a low mobility (∼0.2 cm2/V s) was from TFTs using RT-deposited ZnO. However, the TFT sample using 200 °C deposited ZnO, unlike the others, revealed a very large amount of off-state current resulting in the on/off current ratio of only ∼102. It is because the ZnO layer deposited at 200 °C is too conductive to act as an optimum TFT channel. It is concluded that optimal ZnO-based TFTs are obtained using the medium deposition temperature of 100 °C." @default.
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- W2000851034 date "2004-05-01" @default.
- W2000851034 modified "2023-09-24" @default.
- W2000851034 title "ZnO-based thin-film transistors of optimal device performance" @default.
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- W2000851034 doi "https://doi.org/10.1116/1.1756166" @default.
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