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• W2000860611 startingPage "1131" @default.
• W2000860611 abstract "We have examined the possibility that the saturation of the hole concentration observed in the $p$-type doping of ZnSe is caused by the formation of complexes between the substitutional acceptors and charged native defects such as Se vacancies and Zn interstitials. We present a simple model of compensation in which the relevant parameters are computed from first principles. A large lattice relaxation associated with the Se vacancy and the corresponding complex lowers their formation energy significantly. However, the large binding energy of the acceptor-Zn-interstitial complex should make it a more efficient compensator. Under typical growth conditions, our model reproduces the experimentally observed saturation of the hole concentration in the ${10}^{18}$ ${mathrm{cm}}^{ensuremath{-}3}$ range." @default.
• W2000860611 created "2016-06-24" @default.
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• W2000860611 date "1995-02-13" @default.
• W2000860611 modified "2023-10-09" @default.
• W2000860611 title "Compensation of<mml:math xmlns:mml=http://www.w3.org/1998/Math/MathML display=inline><mml:mi>p</mml:mi></mml:math>-Type Doping in ZnSe: The Role of Impurity-Native Defect Complexes" @default.
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• W2000860611 doi "https://doi.org/10.1103/physrevlett.74.1131" @default.
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