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• W2000863854 abstract "In this paper, we use a tight binding Hamiltonian with spin orbit coupling to study the real and complex band structures of relaxed and strained GaAs. A simple d orbital on-site energy shift coupled with appropriate scaling of the off-diagonal terms is found to correctly reproduce the band-edge shifts with strain. Four different ⟨100⟩ strain combinations, namely, uniaxial compressive, uniaxial tensile, biaxial compressive, and biaxial tensile strain are studied, revealing rich valence band structure and strong relative orientation dependent tunneling. It is found that complex bands are unable to provide unambiguous tunneling paths away from the Brillouin zone center. Tunneling current density distribution over the Brillouin zone is computed using non-equilibrium Green's function approach elucidating a physical picture of band to band tunneling." @default.
• W2000863854 created "2016-06-24" @default.
• W2000863854 creator A5080586830 @default.
• W2000863854 date "2014-05-02" @default.
• W2000863854 modified "2023-09-23" @default.
• W2000863854 title "Band to band tunneling in III-V semiconductors: Implications of complex band structure, strain, orientation, and off-zone center contribution" @default.
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• W2000863854 doi "https://doi.org/10.1063/1.4874917" @default.
• W2000863854 hasPublicationYear "2014" @default.
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